2SB1580 / 2sb1316 transistors power transistor ( ? 100v , ? 2a) 2SB1580 / 2sb1316 z features 1) darlington connection for high dc current gain. 2) built-in resistor between base and emitter. 3) built-in damper diode. 4) complements the 2sd2195 / 2sd1980. z absolute maximum ratings (ta = 25 c) parameter symbol v cbo v ceo v ebo i c p c tj tstg limits ? 100 ? 100 ? 8 ? 2 2 1 150 ? 55~ + 150 unit v v v a(dc) ? 3 ? 1 a(pulse) w 10 ? 2 w(tc = 25 c) 2SB1580 2sb1316 c collector-base voltage collector-emitter voltage emitter-base voltage collector current collector power dissipation junction temperature storage temperature c ? 1 single pulse pw = 100ms ? 2 when mounted on a 40 x 40 x 0.7 mm ceramic board. z packaging specifications and h fe type 2SB1580 mpt3 1k~10k t100 1000 bn ? 2sb1316 cpt3 1k~10k tl 2500 ? denotes h fe package h fe code basic ordering unit (pieces) marking ? z equivalent circuit r 1 3.5k ? r 2 300 ? b c e c b e : base : collector : emitter r 1 r 2 z external dimensions (units : mm) 2sb1316 2SB1580 (3) emitter(source) (2) collector(drain) (1) base(gate) eiaj : sc-62 (3) emitter(source) (2) collector(drain) (1) base(gate) rohm : cpt3 eiaj : sc-63 1.5 0.4 1.5 0.4 1.6 0.5 3.0 0.4 1.5 ( 3 ) 4.5 ( 1 ) ( 2 ) 0.5 4.0 2.5 1.0 rohm : mpt3 2.3 0.5 1.0 0.5 9.5 2.5 0.8min. 1.5 6.5 2.3 ( 2 ) ( 3 ) c0.5 0.65 0.9 ( 1 ) 0.75 2.3 0.9 1.5 5.5 5.1 z electrical characteristics (ta = 25 c) parameter symbol min. typ. max. unit conditions bv cbo bv ceo i cbo i ebo cob ? 100 ? 100 ? ? ? ? ? ? ? 35 ? ? ? 10 ? 3 ? v v a ma pf i c = ? 50 a i c = ? 5ma v cb = ? 100v v eb = ? 7v v ce(sat) ?? ? 1.5 v i c /i b =? 1a/ ? 1ma h fe 1000 ? 10000 ? ? v ce = ? 2v , i c = ? 1a v cb = ? 10v , i e = 0a , f = 1mhz collector-base breakdown voltage collector-emitter breakdown voltage collector cutoff current emitter cutoff current output capacitance collector-emitter saturation voltage dc current transfer ratio ? ? measured using pulse current.
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